802294-64-0合成路线 （共 916 条）
反应条件
0.60 wt.percent Ga/SiO2 T=300°C; P=1500.15 Torr; 1 - 3 h; Product distribution / selectivity;
参考文献
SUMITOMO CHEMICAL COMPANY, LIMITED
Patent: US2005/277786 A1, 2005 ;
Location in patent: Page/Page column 4 ;
反应条件
oxygen; aluminum oxide T=330°C; Product distribution / selectivity;
参考文献
Air Products and Chemicals, Inc.
Patent: EP1659108 A1, 2006 ;
Location in patent: Page/Page column 9-10 ;
反应条件
V-Si-P ternary oxide T=300°C; other temperatures; other contact times; other concentrations of the educts; or with water vapor; Product distribution;
参考文献
Ai
Bulletin of the Chemical Society of Japan, 1990 , vol. 63, # 4 p. 1217 - 1220
反应条件
oxygen; aluminum oxide T=350°C; Product distribution / selectivity;
参考文献
Air Products and Chemicals, Inc.
Patent: EP1659108 A1, 2006 ;
Location in patent: Page/Page column 9-10 ;
反应条件
aluminum oxide T=330°C; Product distribution / selectivity;
参考文献
Air Products and Chemicals, Inc.
Patent: EP1659108 A1, 2006 ;
Location in patent: Page/Page column 9-10 ;
反应条件
aluminum oxide T=330°C; Product distribution / selectivity;
参考文献
Air Products and Chemicals, Inc.
Patent: EP1659108 A1, 2006 ;
Location in patent: Page/Page column 9-10 ;
参考文献
Hantzsch; Hibbert
Chemische Berichte, 1907 , vol. 40, p. 1517
反应条件
sulfuric acid Electrolysis;
参考文献
Mueller,F.
Zeitschrift fuer Elektrochemie und Angewandte Physikalische Chemie, 1927 , vol. 33, p. 569
反应条件
T=100°C; Geschwindigkeit;
参考文献
Lieben; Molnar
Monatshefte fuer Chemie, 1929 , vol. 53/54, p. 3
Full Text Show Details
Polonovsky
Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1924 , vol. 178, p. 576
参考文献
Deupree; Lyons
Proceedings of the Indiana Academy of Science, 1937 , vol. 46, p. 101
Chem. Zentralbl., 1938 , vol. 109, # II p. 4052
