in benzene under inert gas; 6.30 mmol Et2S added to 6.30 mmol of the Ga compound in benzene; stirring at room temp.; 2 phases sepd.; oily phase stirred with n-pentane and dried in vac.; elem. anal.;
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene under inert gas; 5.88 mmol Et2O added to 5.88 mmol of the Ga compound in benzene; stirring at room temp.; 2 phases sepd.; oily phase stirred with n-pentane and dried in vac.; elem. anal.;
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene 4.62 mmol Me3SiSMe added to 4.62 mmol of the Ga compound in benzene; stirring at room temp.; filtration; solvent removed in vac.; elem. anal. (Cl2GaSC2H5);
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene 2.10 mmol Pb(SCH3)2 added to 4.20 mmol of the Ga compound in benzene; stirring at room temp.; filtration; solvent removed in vac.; residue washed with n-pentane and dried in vac.; elem. anal. (Cl2GaSC2H5);
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene 4.62 mmol Me3SiSMe added to 4.62 mmol of the Ga compound in benzene; stirring at room temp.; filtration; solvent removed in vac.; elem. anal. (Cl2GaSC2H5);
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene 2.10 mmol Pb(SCH3)2 added to 4.20 mmol of the Ga compound in benzene; stirring at room temp.; filtration; solvent removed in vac.; residue washed with n-pentane and dried in vac.; elem. anal. (Cl2GaSC2H5);
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
in benzene
4.62 mmol Me3SiSMe added to 4.62 mmol of the Ga compound in benzene; stirring at room temp.; filtration; solvent removed in vac.; elem. anal. (Cl2GaSC2H5);
参考文献
Hoffmann, G. G.
Zeitschrift fuer Anorganische und Allgemeine Chemie, 1988 , vol. 558, p. 160 - 170
