in gaseous matrix Kinetics; oxidn. of H2 in presence of SO2 (up to 20percent) at 773 K, 400 Torr, N2 carrier gas, semi-state method (monitoring of react. by pressure change);
参考文献
Journal de Chimie Physique et de Physico-Chimie Biologique, , vol. 82, # 5 p. 499 - 504
in neat (no solvent) Kinetics; byproducts: S2O3Cl4; Irradiation (UV/VIS); glass vessel; quartz or UV lamp; equilibrium and temps. discussed; further byproduct S2O3Cl4;;
参考文献
Zeitschrift fuer Elektrochemie, , vol. 21, p. 329 - 342